標題: | GAAS BIDIRECTIONAL BISTABILITY SWITCH USING DOUBLE TRIANGULAR BARRIER STRUCTURES |
作者: | YARN, KF WANG, YH CHANG, CY 電控工程研究所 Institute of Electrical and Control Engineering |
公開日期: | 1-三月-1994 |
摘要: | We report on the experimental results of a new bidirectional bistability switching device using GaAs double triangular barrier structures prepared by molecular beam epitaxy. Bidirectional switching has been predicted experimentally in n+-n--delta(p+)-n--p+-n--delta(p+)-n--n+ structure. The significant S-shaped negative differential resistance characteristics are obtained due to the voltage-induced avalanche breakdown and potential barrier redistribution. A large on/off voltage ratio of approximately 6.5 is observed in either direction of two-state at room temperature. In addition, the device can be expected to operate as a three-terminal triggered triac. |
URI: | http://dx.doi.org/10.1063/1.357020 http://hdl.handle.net/11536/2589 |
ISSN: | 0021-8979 |
DOI: | 10.1063/1.357020 |
期刊: | JOURNAL OF APPLIED PHYSICS |
Volume: | 75 |
Issue: | 5 |
起始頁: | 2695 |
結束頁: | 2698 |
顯示於類別: | 期刊論文 |