標題: A NOVEL DIAC-LIKE SWITCH USING DOUBLE TRIANGULAR BARRIERS
作者: YARN, KF
WANG, YH
CHANG, CY
電控工程研究所
Institute of Electrical and Control Engineering
公開日期: 1-十一月-1994
摘要: In this study, a new diac-like switch using GaAs double triangular barrier structures (DTBS) prepared by molecular beam epitaxy (MBE) has been fabricated and demonstrated. Unique bidirectional current-voltage (I-V) characteristics between 300 and 77 K were realized for the first time. Large on/off voltage differences and control efficiency were observed in both directions. Based on I-V measurements, the operation mechanism of the diac-like switch was analyzed and is discussed in detail using an equivalent circuit approach. A temperature-dependent effect on the switching voltage, V(S), and holding voltage, V(H), was also investigated.
URI: http://hdl.handle.net/11536/2252
ISSN: 0038-1101
期刊: SOLID-STATE ELECTRONICS
Volume: 37
Issue: 11
起始頁: 1849
結束頁: 1852
顯示於類別:期刊論文