標題: | A NOVEL DIAC-LIKE SWITCH USING DOUBLE TRIANGULAR BARRIERS |
作者: | YARN, KF WANG, YH CHANG, CY 電控工程研究所 Institute of Electrical and Control Engineering |
公開日期: | 1-十一月-1994 |
摘要: | In this study, a new diac-like switch using GaAs double triangular barrier structures (DTBS) prepared by molecular beam epitaxy (MBE) has been fabricated and demonstrated. Unique bidirectional current-voltage (I-V) characteristics between 300 and 77 K were realized for the first time. Large on/off voltage differences and control efficiency were observed in both directions. Based on I-V measurements, the operation mechanism of the diac-like switch was analyzed and is discussed in detail using an equivalent circuit approach. A temperature-dependent effect on the switching voltage, V(S), and holding voltage, V(H), was also investigated. |
URI: | http://hdl.handle.net/11536/2252 |
ISSN: | 0038-1101 |
期刊: | SOLID-STATE ELECTRONICS |
Volume: | 37 |
Issue: | 11 |
起始頁: | 1849 |
結束頁: | 1852 |
顯示於類別: | 期刊論文 |