標題: GAAS BIDIRECTIONAL BISTABILITY SWITCH USING DOUBLE TRIANGULAR BARRIER STRUCTURES
作者: YARN, KF
WANG, YH
CHANG, CY
電控工程研究所
Institute of Electrical and Control Engineering
公開日期: 1-Mar-1994
摘要: We report on the experimental results of a new bidirectional bistability switching device using GaAs double triangular barrier structures prepared by molecular beam epitaxy. Bidirectional switching has been predicted experimentally in n+-n--delta(p+)-n--p+-n--delta(p+)-n--n+ structure. The significant S-shaped negative differential resistance characteristics are obtained due to the voltage-induced avalanche breakdown and potential barrier redistribution. A large on/off voltage ratio of approximately 6.5 is observed in either direction of two-state at room temperature. In addition, the device can be expected to operate as a three-terminal triggered triac.
URI: http://dx.doi.org/10.1063/1.357020
http://hdl.handle.net/11536/2589
ISSN: 0021-8979
DOI: 10.1063/1.357020
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 75
Issue: 5
起始頁: 2695
結束頁: 2698
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