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dc.contributor.authorLin, Chien-Chungen_US
dc.contributor.authorTan, Ming-Hsuanen_US
dc.contributor.authorTsai, Che-Pinen_US
dc.contributor.authorChuang, Kuei-Yaen_US
dc.contributor.authorLay, T. S.en_US
dc.date.accessioned2014-12-08T15:31:53Z-
dc.date.available2014-12-08T15:31:53Z-
dc.date.issued2013-09-01en_US
dc.identifier.issn1077-260Xen_US
dc.identifier.urihttp://dx.doi.org/10.1109/JSTQE.2013.2244563en_US
dc.identifier.urihttp://hdl.handle.net/11536/22531-
dc.description.abstractA quantum-dot-embedded solar cell model with antireflection coating is proposed and studied numerically. The device model was designed by using MATLAB coding. A proper inclusion of quantum-dot-enhanced carrier absorption was achieved through a modified absorption coefficient and a structure dependent carrier lifetime. The transmission matrix and quasi-drift diffusion method were applied to simulate the optical and electrical characteristics of the device. The experimental results were fitted first to validate the model and provide parameters for optimization. The final simulation showed that the power conversion efficiency (PCE) of an ideal InGaP/GaAs+InAs QD dual-junction cell could achieve 39.04%.en_US
dc.language.isoen_USen_US
dc.subjectTerms-Intermediate band solar cell (IBSC)en_US
dc.subjectphotovoltaic cellsen_US
dc.subjectquantum doten_US
dc.subjectsimulationen_US
dc.subjecttandem cellen_US
dc.subjecttransmission matrix methoden_US
dc.titleNumerical Study of Quantum-Dot-Embedded Solar Cellsen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/JSTQE.2013.2244563en_US
dc.identifier.journalIEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICSen_US
dc.citation.volume19en_US
dc.citation.issue5en_US
dc.citation.epageen_US
dc.contributor.department光電系統研究所zh_TW
dc.contributor.departmentInstitute of Photonic Systemen_US
dc.identifier.wosnumberWOS:000323210900031-
dc.citation.woscount0-
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