Electrical conduction mechanism of Zn:SiOx resistance random access memory with supercritical CO2 fluid process

標題:	Electrical conduction mechanism of Zn:SiOx resistance random access memory with supercritical CO2 fluid process
作者:	Chang, Kuan-Chang Tsai, Tsung-Ming Zhang, Rui Chang, Ting-Chang Chen, Kai-Huang Chen, Jung-Hui Young, Tai-Fa Lou, J. C. Chu, Tian-Jian Shih, Chih-Cheng Pan, Jhih-Hong Su, Yu-Ting Syu, Yong-En Tung, Cheng-Wei Chen, Min-Chen Wu, Jia-Jie Hu, Ying Sze, Simon M. 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
公開日期:	19-Aug-2013
摘要:	In this study, the electrical conduction mechanism of Zn:SiOx resistance random access memory (RRAM) treated with supercritical CO2 fluid (SCCO2) process was investigated by low temperature measurement. The current of low resistance state for current-voltage curves in SCCO2-treated and untreated Zn:SiOx RRAM were measured and compared under a low temperature range from 100K to 298 K. The electrical conduction mechanisms of hopping conduction and metal-like behaviors in SCCO2-treated and untreated Zn:SiOx RRAM were discussed, respectively. Finally, the electrical conduction mechanism was analyzed and verified by the chemical composition and bonding intensity of XPS analyses. (C) 2013 AIP Publishing LLC.
URI:	http://dx.doi.org/10.1063/1.4819162 http://hdl.handle.net/11536/22547
ISSN:	0003-6951
DOI:	10.1063/1.4819162
期刊:	APPLIED PHYSICS LETTERS
Volume:	103
Issue:	8
結束頁:
Appears in Collections:	Articles

Files in This Item:

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.