Low Temperature Improvement Method on Zn:SiOx Resistive Random Access Memory Devices

標題:	Low Temperature Improvement Method on Zn:SiOx Resistive Random Access Memory Devices
作者:	Chang, Kuan-Chang Tsai, Tsung-Ming Chang, Ting-Chang Wu, Hsing-Hua Chen, Kai-Huang Chen, Jung-Hui Young, Tai-Fa Chu, Tian-Jian Chen, Jian-Yu Pan, Chih-Hung Su, Yu-Ting Syu, Yong-En Tung, Cheng-Wei Chang, Geng-Wei Chen, Min-Chen Huang, Hui-Chun Tai, Ya-Hsiang Gan, Der-Shin Wu, Jia-Jie Hu, Ying Sze, Simon M. 電子工程學系及電子研究所光電工程學系 Department of Electronics Engineering and Institute of Electronics Department of Photonics
關鍵字:	Nonvolatile memory;resistive switching;silicon oxide;zinc
公開日期:	1-四月-2013
摘要:	To improve the resistive switching properties of the resistive random access memory (RRAM), the supercritical carbon dioxide (SCCO2) fluid is used as a low temperature treatment. In this letter, the Zn:SiOx thin films are treated by SCCO2 fluid mixed with pure water. After SCCO2 fluid treatment, the resistive switching qualities of the Zn:SiOx thin films are carried out by XPS, fourier transform infrared spectroscopy, and IV measurement. We believe that the SCCO2-treated Zn:SiOx thin film is a promising material for RRAM applications due to its compatibility with portable flat panel display.
URI:	http://dx.doi.org/10.1109/LED.2013.2248075 http://hdl.handle.net/11536/21715
ISSN:	0741-3106
DOI:	10.1109/LED.2013.2248075
期刊:	IEEE ELECTRON DEVICE LETTERS
Volume:	34
Issue:	4
起始頁:	511
結束頁:	513
顯示於類別：	期刊論文

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