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DC 欄位語言
dc.contributor.authorCHIN, SYen_US
dc.contributor.authorWU, CYen_US
dc.date.accessioned2014-12-08T15:03:43Z-
dc.date.available2014-12-08T15:03:43Z-
dc.date.issued1994-11-01en_US
dc.identifier.issn0018-9200en_US
dc.identifier.urihttp://dx.doi.org/10.1109/4.328639en_US
dc.identifier.urihttp://hdl.handle.net/11536/2255-
dc.description.abstractThis paper describes a 10-b high-speed COMS DAC fabricated by 0.8-mu m double-poly double-metal CMOS technology. In the DAC, a new current source called the threshold-voltage compensated current source is used in the two-stage current array to reduce the linearity error caused by inevitable current variations of the current sources, In the two-stage weighted current array, only 32 master and 32 slave unit current sources are required. Thus silicon area and stray capacitance can be reduced significantly. Experimental results show that a conversion rate of 125 MHz is achievable with differential and integral linearity errors of 0.21 LSB and 0.23 LSB, respectively. The power consumption is 150 mW for a single 5-V power supply. The rise/fall time is 3 ns and the full-scale settling time to +/- 1/2 LSB is within 8 ns. The chip area is 1.8 mm x 1.0 mm.en_US
dc.language.isoen_USen_US
dc.titleA 10-B 225-MHZ CMOS DIGITAL-TO-ANALOG CONVERTER (DAC) WITH THRESHOLD-VOLTAGE COMPENSATED CURRENT SOURCESen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/4.328639en_US
dc.identifier.journalIEEE JOURNAL OF SOLID-STATE CIRCUITSen_US
dc.citation.volume29en_US
dc.citation.issue11en_US
dc.citation.spage1374en_US
dc.citation.epage1380en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1994PP28400012-
dc.citation.woscount28-
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