完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | CHIN, SY | en_US |
dc.contributor.author | WU, CY | en_US |
dc.date.accessioned | 2014-12-08T15:03:43Z | - |
dc.date.available | 2014-12-08T15:03:43Z | - |
dc.date.issued | 1994-11-01 | en_US |
dc.identifier.issn | 0018-9200 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/4.328639 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/2255 | - |
dc.description.abstract | This paper describes a 10-b high-speed COMS DAC fabricated by 0.8-mu m double-poly double-metal CMOS technology. In the DAC, a new current source called the threshold-voltage compensated current source is used in the two-stage current array to reduce the linearity error caused by inevitable current variations of the current sources, In the two-stage weighted current array, only 32 master and 32 slave unit current sources are required. Thus silicon area and stray capacitance can be reduced significantly. Experimental results show that a conversion rate of 125 MHz is achievable with differential and integral linearity errors of 0.21 LSB and 0.23 LSB, respectively. The power consumption is 150 mW for a single 5-V power supply. The rise/fall time is 3 ns and the full-scale settling time to +/- 1/2 LSB is within 8 ns. The chip area is 1.8 mm x 1.0 mm. | en_US |
dc.language.iso | en_US | en_US |
dc.title | A 10-B 225-MHZ CMOS DIGITAL-TO-ANALOG CONVERTER (DAC) WITH THRESHOLD-VOLTAGE COMPENSATED CURRENT SOURCES | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/4.328639 | en_US |
dc.identifier.journal | IEEE JOURNAL OF SOLID-STATE CIRCUITS | en_US |
dc.citation.volume | 29 | en_US |
dc.citation.issue | 11 | en_US |
dc.citation.spage | 1374 | en_US |
dc.citation.epage | 1380 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:A1994PP28400012 | - |
dc.citation.woscount | 28 | - |
顯示於類別: | 期刊論文 |