完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | WU, SC | en_US |
dc.contributor.author | HSU, HT | en_US |
dc.contributor.author | CHEN, FH | en_US |
dc.contributor.author | CHANG, WR | en_US |
dc.contributor.author | TSENG, TY | en_US |
dc.date.accessioned | 2014-12-08T15:03:43Z | - |
dc.date.available | 2014-12-08T15:03:43Z | - |
dc.date.issued | 1994-11-01 | en_US |
dc.identifier.issn | 0022-2461 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1007/BF00349952 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/2256 | - |
dc.description.abstract | High-T-c YBa2Cu4O8 (124) thin films have been made by d.c. magnetron sputtering deposition on (100) MgO substrates. The effect of several processing variables, including the ratio of oxygen to argon, total pressure, and substrate temperature, on the superconducting properties of the thin films, were systematically investigated. The as-prepared films annealed in flowing oxygen at 800 degrees C for 4 h under ambient pressure obtained nearly phase-pure 124 and exhibited superconducting onset transition at 75 K. | en_US |
dc.language.iso | en_US | en_US |
dc.title | GROWTH PARAMETER EFFECT IN SUPERCONDUCTING YBA2CU4O8 THIN-FILMS BY DC MAGNETRON SPUTTERING | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1007/BF00349952 | en_US |
dc.identifier.journal | JOURNAL OF MATERIALS SCIENCE | en_US |
dc.citation.volume | 29 | en_US |
dc.citation.issue | 21 | en_US |
dc.citation.spage | 5593 | en_US |
dc.citation.epage | 5598 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:A1994PR24900012 | - |
dc.citation.woscount | 3 | - |
顯示於類別: | 期刊論文 |