完整後設資料紀錄
DC 欄位語言
dc.contributor.authorWU, SCen_US
dc.contributor.authorHSU, HTen_US
dc.contributor.authorCHEN, FHen_US
dc.contributor.authorCHANG, WRen_US
dc.contributor.authorTSENG, TYen_US
dc.date.accessioned2014-12-08T15:03:43Z-
dc.date.available2014-12-08T15:03:43Z-
dc.date.issued1994-11-01en_US
dc.identifier.issn0022-2461en_US
dc.identifier.urihttp://dx.doi.org/10.1007/BF00349952en_US
dc.identifier.urihttp://hdl.handle.net/11536/2256-
dc.description.abstractHigh-T-c YBa2Cu4O8 (124) thin films have been made by d.c. magnetron sputtering deposition on (100) MgO substrates. The effect of several processing variables, including the ratio of oxygen to argon, total pressure, and substrate temperature, on the superconducting properties of the thin films, were systematically investigated. The as-prepared films annealed in flowing oxygen at 800 degrees C for 4 h under ambient pressure obtained nearly phase-pure 124 and exhibited superconducting onset transition at 75 K.en_US
dc.language.isoen_USen_US
dc.titleGROWTH PARAMETER EFFECT IN SUPERCONDUCTING YBA2CU4O8 THIN-FILMS BY DC MAGNETRON SPUTTERINGen_US
dc.typeArticleen_US
dc.identifier.doi10.1007/BF00349952en_US
dc.identifier.journalJOURNAL OF MATERIALS SCIENCEen_US
dc.citation.volume29en_US
dc.citation.issue21en_US
dc.citation.spage5593en_US
dc.citation.epage5598en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1994PR24900012-
dc.citation.woscount3-
顯示於類別:期刊論文