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dc.contributor.authorChen, Yi-Hsuanen_US
dc.contributor.authorYen, Li-Chenen_US
dc.contributor.authorChang, Tien-Shunen_US
dc.contributor.authorChiang, Tsung-Yuen_US
dc.contributor.authorKuo, Po-Yien_US
dc.contributor.authorChao, Tien-Shengen_US
dc.date.accessioned2014-12-08T15:31:57Z-
dc.date.available2014-12-08T15:31:57Z-
dc.date.issued2013-08-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2013.2266331en_US
dc.identifier.urihttp://hdl.handle.net/11536/22572-
dc.description.abstractIt is known that metal-induced lateral crystallization (MILC) thin-film transistors (TFTs) exhibit higher on-state current, steeper subthreshold slope, and lower minimum leakage than solid-phase-crystallization TFTs. In this letter, we propose a tunneling TFT (T-TFT) fabricated by MILC method for the first time. The MILC T-TFTs demonstrate a lower subthreshold swing, similar to 232 mV/decade, than the other T-TFTs and a high ON/OFF ratio > 10(6) at V-DS = 1 V without any hydrogen-related plasma treatment. These improvements can be due to the reduction of defects at grain boundaries and the channel direction parallel to grains. The polycrystalline silicon T-TFTs fabricated in this letter show a great promise for low standby power circuits, drivers of active-matrix liquid crystal displays, and 3-D integrated circuits applications in the future.en_US
dc.language.isoen_USen_US
dc.subjectMetal-induced lateral crystallization (MILC)en_US
dc.subjectpoly-Si thin-film transistor (poly-Si TFTs)en_US
dc.subjecttunneling field-effect-transistor (TFET)en_US
dc.titleLow-Temperature Polycrystalline-Silicon Tunneling Thin-Film Transistors With MILCen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2013.2266331en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume34en_US
dc.citation.issue8en_US
dc.citation.spage1017en_US
dc.citation.epage1019en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000323911800028-
dc.citation.woscount1-
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