Channel Thickness Effect on High-Frequency Performance of Poly-Si Thin-Film Transistors

標題:	Channel Thickness Effect on High-Frequency Performance of Poly-Si Thin-Film Transistors
作者:	Chen, Kun-Ming Tsai, Tzu-I Lin, Ting-Yao Lin, Horng-Chih Chao, Tien-Sheng Huang, Guo-Wei Huang, Tiao-Yuan 電子物理學系電子工程學系及電子研究所 Department of Electrophysics Department of Electronics Engineering and Institute of Electronics
關鍵字:	Channel thickness;gate length;radio frequency;thin-film transistors (TFTs);transconductance
公開日期:	1-八月-2013
摘要:	In this letter, we present the high-frequency performances of polycrystalline silicon (poly-Si) thin-film transistors (TFTs) with a nominal gate length of 0.22 mu m. Owing to the short gate length and adoption of salicide process, cutoff frequency (f (T)) of 17 GHz and maximum oscillation frequency of similar to 21 GHz are obtained. The result suggests that the poly-Si TFT technology is applicable to RF integrated circuits up to 2 GHz. In addition, we also investigate the effects of channel thickness on the high-frequency characteristics of poly-Si TFTs. We find that the variation of f (T) with channel thickness is mainly due to the change in transconductance.
URI:	http://dx.doi.org/10.1109/LED.2013.2267809 http://hdl.handle.net/11536/22574
ISSN:	0741-3106
DOI:	10.1109/LED.2013.2267809
期刊:	IEEE ELECTRON DEVICE LETTERS
Volume:	34
Issue:	8
起始頁:	1020
結束頁:	1022
顯示於類別：	期刊論文

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