A Simple Growth Method to Produce a-Plane GaN Thick Films by Hydride Vapor Phase Epitaxy

doi:10.7567/JJAP.52.08JB08

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Wu, Yin-Hao	en_US
dc.contributor.author	Lee, Chuo-Han	en_US
dc.contributor.author	Chu, Chung-Ming	en_US
dc.contributor.author	Yeh, Yen-Hsien	en_US
dc.contributor.author	Chen, Chan-Lin	en_US
dc.contributor.author	Lee, Wei-I	en_US
dc.date.accessioned	2014-12-08T15:31:58Z	-
dc.date.available	2014-12-08T15:31:58Z	-
dc.date.issued	2013-08-01	en_US
dc.identifier.issn	0021-4922	en_US
dc.identifier.uri	http://dx.doi.org/10.7567/JJAP.52.08JB08	en_US
dc.identifier.uri	http://hdl.handle.net/11536/22578	-
dc.description.abstract	A-plane GaN was grown on r-plane sapphire using a two-step growth method by hydride vapor phase epitaxy (HVPE). In the first step, a-plane GaN formed triangular stripes along the m-direction ([(1) over bar 100] direction) at a low growth temperature. Then, increasing the growth temperature enhanced the lateral growth mode to coalesce a-plane GaN in the second step. There were triangular voids formed after growth. In this work, a new method was developed to produce the voids in the a-plane GaN film using the two-step growth method without optical lithography. (C) 2013 The Japan Society of Applied Physics	en_US
dc.language.iso	en_US	en_US
dc.title	A Simple Growth Method to Produce a-Plane GaN Thick Films by Hydride Vapor Phase Epitaxy	en_US
dc.type	Article	en_US
dc.identifier.doi	10.7567/JJAP.52.08JB08	en_US
dc.identifier.journal	JAPANESE JOURNAL OF APPLIED PHYSICS	en_US
dc.citation.volume	52	en_US
dc.citation.issue	8	en_US
dc.citation.epage		en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.identifier.wosnumber	WOS:000323883100017	-
dc.citation.woscount	0	-
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