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dc.contributor.authorFan, Ming-Longen_US
dc.contributor.authorHu, Vita Pi-Hoen_US
dc.contributor.authorChen, Yin-Nienen_US
dc.contributor.authorSu, Pinen_US
dc.contributor.authorChuang, Ching-Teen_US
dc.date.accessioned2014-12-08T15:32:12Z-
dc.date.available2014-12-08T15:32:12Z-
dc.date.issued2013en_US
dc.identifier.isbn978-1-4799-0113-5en_US
dc.identifier.issn1541-7026en_US
dc.identifier.urihttp://hdl.handle.net/11536/22641-
dc.description.abstractThis paper analyzes the impacts of Random Telegraph Noise (RTN) caused by a single acceptor-type trap on Tunnel FET (TFET) based devices, 8T SRAM cell and sense amplifiers. 3D atomistic TCAD simulations accounting for the impact of localized/negatively-charged trap are utilized to assess the dependence of RTN amplitude (Delta I-D/I-D) on trap location and device geometry. Our results indicate that significant RTN impact occurs for trap located near the tunneling junction. The device design strategies (thinner EOT, W-fin and longer L-eff) to improve TFET device characteristics are found to increase the susceptibility to RTN. Furthermore, TFET-based standard 8T SRAM cell and several commonly used sense amplifiers including Current Latch Sense Amplifier (CLSA), Voltage Latch Sense Amplifier (VLSA), and single-ended large-signal inverter sense amplifier are examined using atomistic 3D TCAD mixed-mode simulations. The presence of RTN is shown to cause extra similar to 16% variations in cell stability (at V-dd = 0.3V) and additional similar to 80mV variation in offset voltage for sense amplifiers at V-dd = 0.5V.en_US
dc.language.isoen_USen_US
dc.subjectFinFETen_US
dc.subjectRandom Telegraph Noise (RTN)en_US
dc.subjectSense Amplifieren_US
dc.subjectSRAM Cellen_US
dc.subjectTunnel FET (TFET)en_US
dc.titleInvestigation of Single-Trap-Induced Random Telegraph Noise for Tunnel FET Based Devices, 8T SRAM Cell, and Sense Amplifiersen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2013 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS)en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000325097500128-
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