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dc.contributor.authorHuang, Y. J.en_US
dc.contributor.authorChung, Steve S.en_US
dc.contributor.authorLee, H. Y.en_US
dc.contributor.authorChen, Y. S.en_US
dc.contributor.authorChen, F. T.en_US
dc.contributor.authorGu, P. Y.en_US
dc.contributor.authorTsai, M. -J.en_US
dc.date.accessioned2014-12-08T15:32:12Z-
dc.date.available2014-12-08T15:32:12Z-
dc.date.issued2013en_US
dc.identifier.isbn978-1-4799-0113-5en_US
dc.identifier.issn1541-7026en_US
dc.identifier.urihttp://hdl.handle.net/11536/22642-
dc.description.abstractThe voltage ramping rate during the forming and set-reset process is strongly related to the formation of soft-breakdown (SBD) paths. In this paper, we examined the effect of two different operation methods in RRAM, including sweep and pulse modes. The RTN analysis has been utilized to examine their influences on the SBD paths. For the first time, we found a different behavior of the RTN currents generated by two different modes of operation. Results show that more SBD paths are created during the pulse mode which led to the instability of switched resistance, and induced the erratic bit during the readout of RRAM.en_US
dc.language.isoen_USen_US
dc.subjectRRAMen_US
dc.subjectSoft-breakdownen_US
dc.subjectRandom Telegraph Noiseen_US
dc.subjectResistive Switching Mechanismen_US
dc.subjectMulti-level Operationen_US
dc.titleThe Physical Insights Into an Abnormal Erratic Behavior in the Resistance Random Access Memoryen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2013 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS)en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000325097500154-
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