二氧化鉿薄膜電阻式隨機存取記憶體之轉換機制及可靠度探討

Abstract

本篇論文是著重在以高介電常數材料為電阻轉換特性層之電阻式記憶體元件的可靠度議題以及其轉換特性物理機制之探討。其中包括與元件面積大小的相關性、寫入狀態的資料保存、多次重複寫入/抹除的元件耐久性、長時間施壓之下的穩定性及對溫度的反應。在可靠度方面, 證實了此種材料組合的電阻式記憶體元件結構具有可靠的多位元的操作特性，其高/低阻態位準差距至少可達三個數量級 。另外，其電阻轉換特性不隨著元件面積縮小而退化，使得此種結構的電阻式記憶體能夠避免一般記憶體在微縮上可能會遇到的物理瓶頸。

In this thesis, we will focus on the reliability issue and the resistive switching mechanism of the high-κ material based thin film resistive random access memory. The reliability issues include area dependence、data retention time、program/erase cycling endurance, stress and the temperature effects. In terms of the reliability, we confirmed that the multi-level operation is reliable, and the high/low resistance ratio may reach three orders in magnitude. Besides, the resistive switching property of RRAM will not be influenced by the device scaling, this makes the possibility to avoid the physical limit with device scaling.