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dc.contributor.authorTian, Jr-Shengen_US
dc.contributor.authorWu, Yue-Hanen_US
dc.contributor.authorWang, Wei-Linen_US
dc.contributor.authorYen, Tzu-Chunen_US
dc.contributor.authorHo, Yen-Tengen_US
dc.contributor.authorChang, Lien_US
dc.date.accessioned2014-12-08T15:32:15Z-
dc.date.available2014-12-08T15:32:15Z-
dc.date.issued2013-10-15en_US
dc.identifier.issn0167-577Xen_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.matlet.2013.07.069en_US
dc.identifier.urihttp://hdl.handle.net/11536/22679-
dc.description.abstractGrowth of nonpolar (10 (1) over bar0) and semipolar (11 (2) over bar(2) over bar) ZnO on (112) LaAlO3 (LAO) substrates can be obtained by annealing the substrate surface in vacuum and oxygen ambient conditions prior to ZnO deposition, respectively. We investigated the origin of the two different growth relationships by inspecting their interface in atomic scale using high angle annular dark field scanning transmission electron microscopy. (10 (1) over bar0) ZnO was grown on flat (112)(LAO) surface due to the similar atomic configurations and small lattice mismatch between them at the interface, and (11 (2) over bar(2) over bar) ZnO was grown on a faceted surface with (001)(LAO) and (110)(LAO) facets on which accommodation growth of both (11 (2) over bar0) ZnO and (000 (1) over bar) ZnO are consistent with [1 (1) over bar 00](ZNO)//[1 (1) over bar0](LAO). (C) 2013 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectStructuralen_US
dc.subjectEpitaxial growthen_US
dc.subjectInterfacesen_US
dc.subjectLaAlO3en_US
dc.subjectZnOen_US
dc.titleThe role of the interface structure on the growth of nonpolar (10(1)over-bar0) and semipolar (11(2)over-bar(2)over-bar) ZnO on (112) LaAlO3 substratesen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.matlet.2013.07.069en_US
dc.identifier.journalMATERIALS LETTERSen_US
dc.citation.volume109en_US
dc.citation.issueen_US
dc.citation.spage237en_US
dc.citation.epage239en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000324902000061-
dc.citation.woscount0-
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