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dc.contributor.authorLin, Yueh Chinen_US
dc.contributor.authorTrinh, Hai Dangen_US
dc.contributor.authorChuang, Ting Weien_US
dc.contributor.authorIwai, Hiroshien_US
dc.contributor.authorKakushima, Kuniyukien_US
dc.contributor.authorAhmet, Parhaten_US
dc.contributor.authorLin, Chun Hsiungen_US
dc.contributor.authorDiaz, Carlos H.en_US
dc.contributor.authorChang, Hui Chenen_US
dc.contributor.authorJang, Simon M.en_US
dc.contributor.authorChang, Edward Yien_US
dc.date.accessioned2014-12-08T15:32:15Z-
dc.date.available2014-12-08T15:32:15Z-
dc.date.issued2013-10-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2013.2272083en_US
dc.identifier.urihttp://hdl.handle.net/11536/22686-
dc.description.abstractIn this letter, a high-k composite oxide composed of La2O3 and HfO2 is investigated for n-In0.53Ga0.47As metal-oxide-semiconductor (MOS) capacitor application. The composite oxide was formed by depositing five layers of La2O3 (0.8 nm)/HfO2(0.8 nm) on InGaAs with post deposition annealing at 500 degrees C. The MOS capacitors fabricated show good inversion behavior, high capacitance, low leakage current, with excellent interface trap density (D-it) of 7.0 x 10(11) cm(-2)eV(-1), small hysteresis of 200 mV and low capacitance equivalent thickness of 2.2 nm at 1 kHz were also achieved.en_US
dc.language.isoen_USen_US
dc.subjectHfO2en_US
dc.subjectInGaAsen_US
dc.subjectLa2O3en_US
dc.subjectmetal-oxide-semiconductor (MOS)en_US
dc.subjectmolecular beam deposition (MBD)en_US
dc.subjectpost deposition annealing (PDA)en_US
dc.titleElectrical Characterization and Materials Stability Analysis of La2O3/HfO2 Composite Oxides on n-In0.53Ga0.47As MOS Capacitors With Different Annealing Temperaturesen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2013.2272083en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume34en_US
dc.citation.issue10en_US
dc.citation.spage1229en_US
dc.citation.epage1231en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000325186600008-
dc.citation.woscount2-
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