Electrical Characterization and Materials Stability Analysis of La2O3/HfO2 Composite Oxides on n-In0.53Ga0.47As MOS Capacitors With Different Annealing Temperatures

doi:10.1109/LED.2013.2272083

標題:	Electrical Characterization and Materials Stability Analysis of La2O3/HfO2 Composite Oxides on n-In0.53Ga0.47As MOS Capacitors With Different Annealing Temperatures
作者:	Lin, Yueh Chin Trinh, Hai Dang Chuang, Ting Wei Iwai, Hiroshi Kakushima, Kuniyuki Ahmet, Parhat Lin, Chun Hsiung Diaz, Carlos H. Chang, Hui Chen Jang, Simon M. Chang, Edward Yi 材料科學與工程學系電子工程學系及電子研究所 Department of Materials Science and Engineering Department of Electronics Engineering and Institute of Electronics
關鍵字:	HfO2;InGaAs;La2O3;metal-oxide-semiconductor (MOS);molecular beam deposition (MBD);post deposition annealing (PDA)
公開日期:	1-十月-2013
摘要:	In this letter, a high-k composite oxide composed of La2O3 and HfO2 is investigated for n-In0.53Ga0.47As metal-oxide-semiconductor (MOS) capacitor application. The composite oxide was formed by depositing five layers of La2O3 (0.8 nm)/HfO2(0.8 nm) on InGaAs with post deposition annealing at 500 degrees C. The MOS capacitors fabricated show good inversion behavior, high capacitance, low leakage current, with excellent interface trap density (D-it) of 7.0 x 10(11) cm(-2)eV(-1), small hysteresis of 200 mV and low capacitance equivalent thickness of 2.2 nm at 1 kHz were also achieved.
URI:	http://dx.doi.org/10.1109/LED.2013.2272083 http://hdl.handle.net/11536/22686
ISSN:	0741-3106
DOI:	10.1109/LED.2013.2272083
期刊:	IEEE ELECTRON DEVICE LETTERS
Volume:	34
Issue:	10
起始頁:	1229
結束頁:	1231
顯示於類別：	期刊論文

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