1. 目前位置：

完整後設資料紀錄
DC 欄位值語言
dc.contributor.authorLiao, Chun-Hungen_US
dc.contributor.authorLi, Chang-Hungen_US
dc.contributor.authorZan, Hsiao-Wenen_US
dc.contributor.authorMeng, Hsin-Feien_US
dc.contributor.authorTsai, Chuang-Chuangen_US
dc.date.accessioned2014-12-08T15:32:15Z-
dc.date.available2014-12-08T15:32:15Z-
dc.date.issued2013-10-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2013.2278393en_US
dc.identifier.urihttp://hdl.handle.net/11536/22689-
dc.description.abstractIn this letter, we use a dual-gate (DG) structure together with nanometer dotlike doping (NDD) in active channel to produce a-IGZO thin-film transistors with very high current drive. With DG operation, the output current increases from 0.14 mA of the conventional device to 0.76 mA of the NDD device. The enhanced lateral field and improved carrier accumulation in DG operation may explain the significantly enlarged drive current. Particularly, simulated electron distribution reveals that high carrier concentration is induced under NDD regions in DG operation. The device without NDD, however, does not exhibit improved drive current in DG operation.en_US
dc.language.isoen_USen_US
dc.subjecta-IGZO thin-film transistor (TFT)en_US
dc.subjectdot dopingen_US
dc.subjectdouble gateen_US
dc.subjectdual gate (DG)en_US
dc.subjectoxide thin-film transistoren_US
dc.titleHigh-Current-Drive Dual-Gate a-IGZO TFT With Nanometer Dotlike Dopingen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2013.2278393en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume34en_US
dc.citation.issue10en_US
dc.citation.spage1274en_US
dc.citation.epage1276en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000325186600023-
dc.citation.woscount1-
顯示於類別：期刊論文


文件中的檔案：

  1. 000325186600023.pdf

若為 zip 檔案，請下載檔案解壓縮後，用瀏覽器開啟資料夾中的 index.html 瀏覽全文。

相關內容
Loading...