Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Liu, Sheng-Hsien | en_US |
dc.contributor.author | Yang, Wen-Luh | en_US |
dc.contributor.author | Lin, Yu-Hsien | en_US |
dc.contributor.author | Wu, Chi-Chang | en_US |
dc.contributor.author | Chao, Tien-Sheng | en_US |
dc.date.accessioned | 2014-12-08T15:32:18Z | - |
dc.date.available | 2014-12-08T15:32:18Z | - |
dc.date.issued | 2013-10-01 | en_US |
dc.identifier.issn | 0018-9383 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/TED.2013.2279156 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/22700 | - |
dc.description.abstract | A novel ion bombardment (IB) technique is presented to fabricate and embed double-layer (DL) Ni nanocrystal (NC) in silicon nitride for TaN/Al2O3/Si3N4/SiO2/Si nonvolatile memory applications. In contrast to other methods of forming DL metal NC, the IB technique is a relatively simple fabrication method and completely compatible with the current IC manufacturing technologies. Using the IB technique, a high-quality ultrathin interlayer between top and bottom layered NCs can be easily formed and controlled. Compared with the control sample, the IB-induced DL Ni NC memory exhibits superior performance in terms of faster program and erase (P/E) speeds, longer data retention, better endurance, negligible program disturbance, and great potential for a multilevel operation. In addition, the IB-induced DL Ni NC device also shows higher P/E efficiency as well as similar excellent reliability by comparison with other conventional DL metal NC memories due to the high-quality ultrathin interlayer. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Double-layer metal nanocrystal | en_US |
dc.subject | ion bombardment (IB) | en_US |
dc.subject | nickel | en_US |
dc.subject | nonvolatile memory (NVM) | en_US |
dc.title | High-Performance Double-Layer Nickel Nanocrystal Memory by Ion Bombardment Technique | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/TED.2013.2279156 | en_US |
dc.identifier.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | en_US |
dc.citation.volume | 60 | en_US |
dc.citation.issue | 10 | en_US |
dc.citation.spage | 3393 | en_US |
dc.citation.epage | 3399 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.identifier.wosnumber | WOS:000324928900058 | - |
dc.citation.woscount | 1 | - |
Appears in Collections: | Articles |
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