Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lai, Ming-Hui | en_US |
dc.contributor.author | Wu, YewChung Sermon | en_US |
dc.contributor.author | Huang, Jung-Jie | en_US |
dc.date.accessioned | 2014-12-08T15:32:22Z | - |
dc.date.available | 2014-12-08T15:32:22Z | - |
dc.date.issued | 2013-10-01 | en_US |
dc.identifier.issn | 0040-6090 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1016/j.tsf.2013.01.042 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/22732 | - |
dc.description.abstract | The Ni-metal-induced crystallization (MIC) of amorphous Si (a-Si) has been employed to fabricate low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs). Most studies have focused only on reducing Ni contamination because Ni residues cause high leakage current in MIC-TFTs. Also of concern is the source/drain (S/D) series resistance, which degrades the device performance (driving ability) that might vary with the Ni concentration in MIC-TFTs. Improving the driving ability of MIC-TFTs requires a detailed understanding of how Ni residues affect S/D series resistance. This study investigates how Ni concentration affects S/D series resistance by using the transmission line method. The results of this study provide further insight into how Ni concentration and resistance are related. The results show that the S/D series resistance and channel resistance decreased with a reduction in Ni concentration in MIC poly-Si because of better crystalline quality and lower degradation of the donor concentration. This phenomenon was caused by the Ni concentration forming less NiSi2 nucleation sites to generate a large grain size; Ni atoms serve as acceptor-like dopants in silicon, which counteract with the effects of n-type doping, subsequently reducing the donor concentration in the S/D region. (C) 2013 Elsevier B. V. All rights reserved. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Metal-induced crystallization (MIC) | en_US |
dc.subject | Thin film transistors (TFTs) | en_US |
dc.subject | Poly-Si | en_US |
dc.subject | Ni concentration | en_US |
dc.subject | Source/drain resistance | en_US |
dc.title | Effect of nickel concentration on source/drain series resistance and channel resistance of Ni-metal-induced crystallization thin-film transistors | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1016/j.tsf.2013.01.042 | en_US |
dc.identifier.journal | THIN SOLID FILMS | en_US |
dc.citation.volume | 544 | en_US |
dc.citation.issue | en_US | |
dc.citation.spage | 500 | en_US |
dc.citation.epage | 503 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.identifier.wosnumber | WOS:000324309100097 | - |
dc.citation.woscount | 0 | - |
Appears in Collections: | Articles |
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