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dc.contributor.authorChen, Jheng-Yuanen_US
dc.contributor.authorYu, Ming-Hungen_US
dc.contributor.authorChang, Shun-Faen_US
dc.contributor.authorSun, Kien Wenen_US
dc.date.accessioned2014-12-08T15:32:24Z-
dc.date.available2014-12-08T15:32:24Z-
dc.date.issued2013-09-23en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.4822116en_US
dc.identifier.urihttp://hdl.handle.net/11536/22746-
dc.description.abstractHigh-efficiency hybrid solar cells based on nanostructured silicon and poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate), which were fabricated via a simple nanoimprint fabrication process, demonstrated an excellent power conversion efficiency of 10.86%. The complex and costly high-temperature photolithography and masking steps were replaced by techniques that are low-cost and capable of mass production. The nanopyramid structures fabricated on the silicon surface provided an antireflective effect and have a radial junction architecture that enhanced the light absorption and carrier collection efficiency. The short-circuit current density (J(sc)) of the hybrid solar cell with nanopyramid structures was greatly improved from 24.5 mA/cm(2) to 32.5 mA/cm(2) compared with that of a flat surface device. The highest solar cell efficiency was achieved on a 525 mu m-thick 2.3 Omega cm n-type Czochralski process (CZ) Si substrate with a designated area of 4 cm(2). (C) 2013 AIP Publishing LLC.en_US
dc.language.isoen_USen_US
dc.titleHighly efficient poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)/Si hybrid solar cells with imprinted nanopyramid structuresen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.4822116en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume103en_US
dc.citation.issue13en_US
dc.citation.epageen_US
dc.contributor.department應用化學系zh_TW
dc.contributor.departmentDepartment of Applied Chemistryen_US
dc.identifier.wosnumberWOS:000325284500106-
dc.citation.woscount6-
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