Temperature-dependent characteristics of junctionless bulk transistor

Abstract

The temperature-dependent performance, including drain current (I-d) and gate capacitance (C-gg) of multi-gate junctionless (JL) bulk transistor for temperature (T) ranging from 150 K to 500 K, was investigated using 3D thermodynamic quantum-corrected device simulation. The combination effect of impurity scattering and phonon scattering is observed owing to the different temperature-dependent of mobility at low and high temperature. Since the C-gg of the JL device consists of a series combination of oxide capacitance (C-ox) and semiconductor channel capacitance (C-S) due to bulk conduction of the current, the C-gg at on-state (V-g = 1 V) shows much sensitive to the temperature than a conventional inversion-mode transistor. (C) 2013 AIP Publishing LLC.