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dc.contributor.authorYeh, Sheng-Shiuanen_US
dc.contributor.authorHsu, Wei-Mingen_US
dc.contributor.authorLee, Jui-Kanen_US
dc.contributor.authorLee, Yao-Jenen_US
dc.contributor.authorLin, Juhn-Jongen_US
dc.date.accessioned2014-12-08T15:32:25Z-
dc.date.available2014-12-08T15:32:25Z-
dc.date.issued2013-09-16en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.4821938en_US
dc.identifier.urihttp://hdl.handle.net/11536/22753-
dc.description.abstractWe have measured the low-frequency noises of ultrathin indium tin oxide films to investigate the effect of post annealing on the noise level. The noises obtained obey an approximate 1/f law in the frequency range f approximate to 0.1-20 Hz. The microstructures and grain sizes of our films were altered by adjusting the annealing conditions. An enhancement of the noise level was observed for those samples comprising smaller grains, where numerous grain boundaries exist. This enhancement in the noise level is ascribed to atomic diffusion along grain boundaries or dynamics of two-level systems near the grain boundaries. (C) 2013 AIP Publishing LLC.en_US
dc.language.isoen_USen_US
dc.title1/f noise in micrometer-sized ultrathin indium tin oxide filmsen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.4821938en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume103en_US
dc.citation.issue12en_US
dc.citation.epageen_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000324826000070-
dc.citation.woscount1-
Appears in Collections:Articles


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