1/f noise in micrometer-sized ultrathin indium tin oxide films

doi:10.1063/1.4821938

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DC 欄位	值	語言
dc.contributor.author	Yeh, Sheng-Shiuan	en_US
dc.contributor.author	Hsu, Wei-Ming	en_US
dc.contributor.author	Lee, Jui-Kan	en_US
dc.contributor.author	Lee, Yao-Jen	en_US
dc.contributor.author	Lin, Juhn-Jong	en_US
dc.date.accessioned	2014-12-08T15:32:25Z	-
dc.date.available	2014-12-08T15:32:25Z	-
dc.date.issued	2013-09-16	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.4821938	en_US
dc.identifier.uri	http://hdl.handle.net/11536/22753	-
dc.description.abstract	We have measured the low-frequency noises of ultrathin indium tin oxide films to investigate the effect of post annealing on the noise level. The noises obtained obey an approximate 1/f law in the frequency range f approximate to 0.1-20 Hz. The microstructures and grain sizes of our films were altered by adjusting the annealing conditions. An enhancement of the noise level was observed for those samples comprising smaller grains, where numerous grain boundaries exist. This enhancement in the noise level is ascribed to atomic diffusion along grain boundaries or dynamics of two-level systems near the grain boundaries. (C) 2013 AIP Publishing LLC.	en_US
dc.language.iso	en_US	en_US
dc.title	1/f noise in micrometer-sized ultrathin indium tin oxide films	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.4821938	en_US
dc.identifier.journal	APPLIED PHYSICS LETTERS	en_US
dc.citation.volume	103	en_US
dc.citation.issue	12	en_US
dc.citation.epage		en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	物理研究所	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.contributor.department	Institute of Physics	en_US
dc.identifier.wosnumber	WOS:000324826000070	-
dc.citation.woscount	1	-
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