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dc.contributor.authorChang, Hye Jungen_US
dc.contributor.authorKalinin, Sergei V.en_US
dc.contributor.authorMorozovska, Anna N.en_US
dc.contributor.authorHuijben, Marken_US
dc.contributor.authorChu, Ying-Haoen_US
dc.contributor.authorYu, Puen_US
dc.contributor.authorRamesh, Ramamoorthyen_US
dc.contributor.authorEliseev, Evgeny A.en_US
dc.contributor.authorSvechnikov, George S.en_US
dc.contributor.authorPennycook, Stephen J.en_US
dc.contributor.authorBorisevich, Albina Y.en_US
dc.date.accessioned2014-12-08T15:32:26Z-
dc.date.available2014-12-08T15:32:26Z-
dc.date.issued2011-06-03en_US
dc.identifier.issn0935-9648en_US
dc.identifier.urihttp://dx.doi.org/10.1002/adma.201004641en_US
dc.identifier.urihttp://hdl.handle.net/11536/22769-
dc.description.abstractDirect atomic displacement mapping at ferroelectric interfaces by aberration corrected scanning transmission electron microscopy (STEM) (a-STEM image, b-corresponding displacement profile) is combined with the Landau-Ginsburg-Devonshire theory to obtain the complete interface electrostatics in real space, including separate estimates for the polarization and intrinsic interface charge contributions.en_US
dc.language.isoen_USen_US
dc.titleAtomically Resolved Mapping of Polarization and Electric Fields Across Ferroelectric/Oxide Interfaces by Z-contrast Imagingen_US
dc.typeArticleen_US
dc.identifier.doi10.1002/adma.201004641en_US
dc.identifier.journalADVANCED MATERIALSen_US
dc.citation.volume23en_US
dc.citation.issue21en_US
dc.citation.spage2474en_US
dc.citation.epage+en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000291732000013-
dc.citation.woscount33-
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