标题: | Electrical Performance Enhancement of AlZn-SnO Thin Film Transistor by Supercritical Fluid Treatment |
作者: | Teng, Li-Feng Liu, Po-Tsun Wang, Wei-Ya 光电工程学系 显示科技研究所 Department of Photonics Institute of Display |
关键字: | Al-Zn-Sn-O thin film transistor (Al-Zn-Sn-O TFT);supercritical fluid (SCF);transparent amorphous oxide semiconductor (TAOS) |
公开日期: | 1-九月-2013 |
摘要: | In this letter, a low-temperature supercritical fluid (SCF) treatment was employed to enhance the electrical and optical properties of amorphous Al-Zn-Sn-O thin film transistors (a-AZTO TFTs) for flat-panel displays. The carrier mobility and threshold voltage of a-AZTO TFT were improved significantly after SCF process because of the reduction of trap density in the a-AZTO active layer. In addition, the SCF-treated a-AZTO TFT exhibited superior electrical reliability and less degradation after negative gate bias illumination stress. X-ray photoelectron spectroscopy analysis confirmed that the proposed SCF treatment could effectively oxidize a-AZTO film and change the oxidation states of Sn, resulting in the improvement of a-AZTO TFT device characteristics. |
URI: | http://dx.doi.org/10.1109/LED.2013.2272117 http://hdl.handle.net/11536/22783 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2013.2272117 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 34 |
Issue: | 9 |
起始页: | 1154 |
结束页: | 1156 |
显示于类别: | Articles |
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