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dc.contributor.authorLin, Horng-Chihen_US
dc.contributor.authorLyu, Rong-Jheen_US
dc.contributor.authorHuang, Tiao-Yuanen_US
dc.date.accessioned2014-12-08T15:32:31Z-
dc.date.available2014-12-08T15:32:31Z-
dc.date.issued2013-09-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2013.2274263en_US
dc.identifier.urihttp://hdl.handle.net/11536/22785-
dc.description.abstractA method was developed to fabricate ZnO thin-film transistors (TFTs) with submicrometer channel length. In this scheme, mature process techniques are used to form a suspending hardmask bridge on the wafer surface, which enables the subsequent construction of a TFT by the sequential deposition of gate oxide, ZnO channel layer, and Al source/drain contacts. Excellent electrical characteristics were demonstrated by the fabricated ZnO TFTs that show high ON/OFF current ratio (>10(9)), low subthreshold swing (89 mV/decade), and high field-effect mobility (41 cm(2)/V s). Very small variation in the device characteristics is also demonstrated.en_US
dc.language.isoen_USen_US
dc.subjectMetal oxideen_US
dc.subjectshadow masken_US
dc.subjectsubmicrometeren_US
dc.subjectthin-film transistorsen_US
dc.subjectZnOen_US
dc.titleFabrication of High-Performance ZnO Thin-Film Transistors With Submicrometer Channel Lengthen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2013.2274263en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume34en_US
dc.citation.issue9en_US
dc.citation.spage1160en_US
dc.citation.epage1162en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000323982500029-
dc.citation.woscount5-
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