Co-sputtered Cu/Ti Bonded Interconnects for 3D Integration Applications

Full metadata record

DC Field	Value	Language
dc.contributor.author	Chen, Hsiao-Yu	en_US
dc.contributor.author	Hsu, Sheng-Yao	en_US
dc.contributor.author	Chen, Kuan-Neng	en_US
dc.date.accessioned	2014-12-08T15:32:43Z	-
dc.date.available	2014-12-08T15:32:43Z	-
dc.date.issued	2013	en_US
dc.identifier.isbn	978-1-4673-3082-4	en_US
dc.identifier.issn	1524-766X	en_US
dc.identifier.uri	http://hdl.handle.net/11536/22853	-
dc.description.abstract	Investigation of co-sputtered Cu/Ti as bonded interconnects for 3D integration is presented in this paper. The proposed structure has the features of self-formed adhesion layer, Cu as major bonding/conducting material, and potential Ti oxide as sidewall passivation. The excellent electrical performance and high electrical stability against humidity and electro-migration of this structure are achieved.	en_US
dc.language.iso	en_US	en_US
dc.subject	3D integration	en_US
dc.subject	co-sputtered metal bonding	en_US
dc.subject	self-formed adhesion layer	en_US
dc.title	Co-sputtered Cu/Ti Bonded Interconnects for 3D Integration Applications	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2013 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS, AND APPLICATIONS (VLSI-TSA)	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000326324800046	-
Appears in Collections:	Conferences Paper