標題: | Cosputtered Cu/Ti Bonded Interconnects With a Self-Formed Adhesion Layer for Three-Dimensional Integration Applications |
作者: | Hsu, Sheng-Yao Chen, Hsiao-Yu Chen, Kuan-Neng 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | Adhesion layer;metal bonding;3-D integration |
公開日期: | 1-七月-2012 |
摘要: | A novel 3-D bonding technology with cosputtered copper and titanium as bonding material is proposed and investigated based on the diffusion mechanism of cosputtered metal during bonding. This technology features a self-formed adhesion layer for Cu metal layers and interconnects. In addition, cosputtered Cu/Ti bonding exhibits good electrical performance as well as high resistance to multiple current stressing. With the advantages of fabrication efficiency and reliable bond quality, cosputtered Cu/Ti bonding technology presents the potential to be applied in 3-D integration. |
URI: | http://hdl.handle.net/11536/16446 |
ISSN: | 0741-3106 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 33 |
Issue: | 7 |
結束頁: | 1048 |
顯示於類別: | 期刊論文 |