Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Hung, Chih-Tsang | en_US |
dc.contributor.author | Huang, Shen-Che | en_US |
dc.contributor.author | Lu, Tien-Chang | en_US |
dc.date.accessioned | 2014-12-08T15:32:44Z | - |
dc.date.available | 2014-12-08T15:32:44Z | - |
dc.date.issued | 2013 | en_US |
dc.identifier.isbn | 978-0-8194-9666-9 | en_US |
dc.identifier.issn | 0277-786X | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/22863 | - |
dc.identifier.uri | http://dx.doi.org/10.1117/12.2024042 | en_US |
dc.description.abstract | We investigate the influence of passivation structure on the optical mode distribution and LI characteristics for the edge emitting AlGaInP-GaInP visible laser diode (LD). For traditional single-layer Si3N4 or SiO2 passivation designs, the modification of dielectric layer thickness can determinate the lateral near-field confinement and change the horizontal far-field (FF) divergence. By increasing the film thickness, the non-radiation absorption come from Au-Ti can be improved and it leads to a narrow FF divergence beam. As continue to increasing the thickness, thicker passivation provides a better confinement factor and then the far-field pattern turn to be wider. For LI characteristics, it is necessary to deposit a thick enough passivation to reduce metal absorption. However, it cause much thermal energy accumulated in the ridge waveguide and deteriorate the quantum efficiency as adopting a too thick dielectric layer. Finally, we demonstrate a high power AlGaInP-GaInP multi quantum wells (MQWs) LD adopted a high-reflectivity passivation to enhance the LI characteristics and keep a suitable far-field divergence angle simultaneously. Under the design of three-pair optical thin films, it cannot only avoid the metal absorption but also enhance emitting efficiency and heat dissipation by using a high reflective and good thermal conductive three-pair optical thin films, it cannot only avoid the metal absorption but also enhance emitting efficiency and heat dissipation by using a high reflective and good thermal conductive Al2O3/Ta2O5 multilayer. The measured room-temperature threshold current (I-th) and characteristic temperature (T-0) can be arrived 44.5mA and 104.2K at 16.4 degrees far-fielddivergence. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | AlGaInP | en_US |
dc.subject | laser diodes | en_US |
dc.subject | quantum-well lasers | en_US |
dc.subject | dielectric layer | en_US |
dc.subject | mode modulation | en_US |
dc.title | Optical Mode Modulation of AlGaInP Multi Quantum Well Laser Diodes | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.doi | 10.1117/12.2024042 | en_US |
dc.identifier.journal | NANOENGINEERING: FABRICATION, PROPERTIES, OPTICS, AND DEVICES X | en_US |
dc.citation.volume | 8816 | en_US |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | Department of Photonics | en_US |
dc.identifier.wosnumber | WOS:000325972900009 | - |
Appears in Collections: | Conferences Paper |
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