標題: Coaxial-Structured Solar Cells with Silicon Nanostructures
作者: Li, Hung-Hsien
Chen, Kuan-Heng
Chiou, Si-Ming
Liu, Han-Wen
Juan, Chuan-Ping
Cheng, Huang-Chung
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2012
摘要: Coaxial-structured solar cells with different lengths silicon nanowires (SiNWs) fabricated by e-beam lithography and transformer coupled plasma reactive ion etching (TCP-RIE) were demonstrated in this paper. With the intrinsic amorphous silicon thickness of 15 nm and n-layer thickness of 25 nm, the short-current density and the conversion efficiency of the flat film solar cell were 17.58 mA/cm(2) and 3.16 %, respectively. Furthermore, the short-current density increased from 20.75 to 27.90 mA/cm(2) and the conversion efficiency increased from 3.59 to 4.69 % when the silicon nanowires length was increased from 0.5 to 1 mu m. The proposed coaxial-structured solar cells with SiNWs exhibited nearly 48.42 % efficiency enhancement over the plat film solar cell.
URI: http://hdl.handle.net/11536/22895
http://dx.doi.org/10.1149/1.3700917
ISBN: 978-1-60768-313-1
ISSN: 1938-5862
DOI: 10.1149/1.3700917
期刊: DIELECTRICS FOR NANOSYSTEMS 5: MATERIALS SCIENCE, PROCESSING, RELIABILITY, AND MANUFACTURING -AND-TUTORIALS IN NANOTECHNOLOGY: MORE THAN MOORE - BEYOND CMOS EMERGING MATERIALS AND DEVICES
Volume: 45
Issue: 3
起始頁: 529
結束頁: 535
Appears in Collections:Conferences Paper


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