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dc.contributor.authorWANG, YHen_US
dc.contributor.authorLIU, MHen_US
dc.contributor.authorHOUNG, MPen_US
dc.contributor.authorCHEN, JFen_US
dc.contributor.authorCHO, AYen_US
dc.date.accessioned2014-12-08T15:03:44Z-
dc.date.available2014-12-08T15:03:44Z-
dc.date.issued1994-10-01en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://dx.doi.org/10.1109/16.324581en_US
dc.identifier.urihttp://hdl.handle.net/11536/2289-
dc.description.abstractThe negative differential resistance (NDR) phenomena were observed in GaSb/AlSb/InAs/-GaSb/AlSb/InAs resonant interband tunnel structures. Electron has resonantly achieved interband tunneling through the InAs/GaSb broken-gap quantum well. The InAs well width causes significant variations of the peak current density and NDR behaviors. The peak current density varies exponentially with the AlSb barrier thickness. The multiple NDR behavior was observed with appropriate InAs well and AlSb barrier thickness, e.g., 30 angstrom thick AlSb barrier and 240 angstrom wide InAs well. Only single negative resistance has, otherwise, been seen. The three-band model was used to interpret the effect of the InAs well and AlSb barrier on the current-voltage characteristics of GaSb/AlSb/InAs/GaSb/AlSb/InAs structures.en_US
dc.language.isoen_USen_US
dc.titleINVESTIGATION OF NEGATIVE DIFFERENTIAL RESISTANCE PHENOMENA IN GASB/ALSB/INAS/GASB/ALSB/INAS STRUCTURESen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/16.324581en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume41en_US
dc.citation.issue10en_US
dc.citation.spage1734en_US
dc.citation.epage1741en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:A1994PK41000007-
dc.citation.woscount11-
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