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dc.contributor.authorHo, Szu-Hanen_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorWu, Chi-Weien_US
dc.contributor.authorLo, Wen-Hungen_US
dc.contributor.authorChen, Ching-Enen_US
dc.contributor.authorTsai, Jyun-Yuen_US
dc.contributor.authorChen, Hua-Maoen_US
dc.contributor.authorLiu, Guan-Ruen_US
dc.contributor.authorTseng, Tseung-Yuenen_US
dc.contributor.authorCheng, Osberten_US
dc.contributor.authorHuang, Cheng-Tungen_US
dc.contributor.authorChen, Danielen_US
dc.contributor.authorSze, Simon M.en_US
dc.date.accessioned2014-12-08T15:32:49Z-
dc.date.available2014-12-08T15:32:49Z-
dc.date.issued2013en_US
dc.identifier.issn2162-8769en_US
dc.identifier.urihttp://hdl.handle.net/11536/22910-
dc.identifier.urihttp://dx.doi.org/10.1149/2.027309jssen_US
dc.description.abstractIn this study, the authors investigated an anomalous gate current hump after dynamic negative bias stress (NBS) and negative-bias temperature-instability (NBTI) in HfxZr1-xO2 and HfO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors. This result is attributed to hole trapping in high-k bulk. Measuring gate current under initial through body floating and source/drain floating conditions indicates that holes flow from source/drain to gate. The fitting of the gate current-gate voltage characteristic curve demonstrates that Frenkel-Poole mechanism dominates the conduction under initial. Next, fitting the gate current after dynamic NBS and NBTI indicates Frenkel-Poole then tunneling mechanisms, finally returning to the Frenkel-Poole mechanism. These phenomena can be attributed to hole trapping in high-k bulk and the formula Ehigh-k epsilon(high-k) = Q + E-sio2 epsilon(sio2). To further understand the gate current hump, both Zr-undoped and 8 similar to 10% Zr-doped in high-k bulk devices were used for comparisons. These results indicate that initial gate current is also a significant factor in generating the anomalous gate current hump, and all results obey the hump generation condition of J(Tunneling) << J(Frenkel-Poole). (C) 2013 The Electrochemical Society. All rights reserved.en_US
dc.language.isoen_USen_US
dc.titleAnomalous Gate Current Hump after Dynamic Negative Bias Stress and Negative-Bias Temperature-Instability in p-MOSFETs with HfxZr1-xO2 and HfO2/Metal Gate Stacksen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/2.027309jssen_US
dc.identifier.journalECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGYen_US
dc.citation.volume2en_US
dc.citation.issue9en_US
dc.citation.spageQ187en_US
dc.citation.epageQ191en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000325681300013-
dc.citation.woscount0-
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