標題: | Analysis of an anomalous hump in gate current after dynamic negative bias stress in HfxZr1-xO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors |
作者: | Ho, Szu-Han Chang, Ting-Chang Wu, Chi-Wei Lo, Wen-Hung Chen, Ching-En Tsai, Jyun-Yu Luo, Hung-Ping Tseng, Tseung-Yuen Cheng, Osbert Huang, Cheng-Tung Sze, Simon M. 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 1-一月-1970 |
摘要: | "This letter investigates a hump in gate current after dynamic negative bias stress (NBS) in HfxZr1-xO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors. By measuring gate current under initial through body floating and source/drain floating, it shows that hole current flows from source/drain. The fitting of gate current-gate voltage characteristic curve demonstrates that Frenkel-Poole mechanism dominates the conduction. Next, by fitting the gate current after dynamic NBS, in the order of Frenkel-Poole then tunneling, the Frenkel-Poole mechanism can be confirmed. These phenomena can be attributed to hole trapping in high-k bulk and the electric field formula Ehigh-k epsilon(high-k) = Q + E-sio2 epsilon(sio2). (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4739525]" |
URI: | http://dx.doi.org/52105 http://hdl.handle.net/11536/16747 |
ISSN: | 0003-6951 |
DOI: | 52105 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 101 |
Issue: | 5 |
結束頁: | |
顯示於類別: | 期刊論文 |