標題: | Anomalous Gate Current Hump after Dynamic Negative Bias Stress and Negative-Bias Temperature-Instability in p-MOSFETs with HfxZr1-xO2 and HfO2/Metal Gate Stacks |
作者: | Ho, Szu-Han Chang, Ting-Chang Wu, Chi-Wei Lo, Wen-Hung Chen, Ching-En Tsai, Jyun-Yu Chen, Hua-Mao Liu, Guan-Ru Tseng, Tseung-Yuen Cheng, Osbert Huang, Cheng-Tung Chen, Daniel Sze, Simon M. 電子工程學系及電子研究所 光電工程學系 Department of Electronics Engineering and Institute of Electronics Department of Photonics |
公開日期: | 2013 |
摘要: | In this study, the authors investigated an anomalous gate current hump after dynamic negative bias stress (NBS) and negative-bias temperature-instability (NBTI) in HfxZr1-xO2 and HfO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors. This result is attributed to hole trapping in high-k bulk. Measuring gate current under initial through body floating and source/drain floating conditions indicates that holes flow from source/drain to gate. The fitting of the gate current-gate voltage characteristic curve demonstrates that Frenkel-Poole mechanism dominates the conduction under initial. Next, fitting the gate current after dynamic NBS and NBTI indicates Frenkel-Poole then tunneling mechanisms, finally returning to the Frenkel-Poole mechanism. These phenomena can be attributed to hole trapping in high-k bulk and the formula Ehigh-k epsilon(high-k) = Q + E-sio2 epsilon(sio2). To further understand the gate current hump, both Zr-undoped and 8 similar to 10% Zr-doped in high-k bulk devices were used for comparisons. These results indicate that initial gate current is also a significant factor in generating the anomalous gate current hump, and all results obey the hump generation condition of J(Tunneling) << J(Frenkel-Poole). (C) 2013 The Electrochemical Society. All rights reserved. |
URI: | http://hdl.handle.net/11536/22910 http://dx.doi.org/10.1149/2.027309jss |
ISSN: | 2162-8769 |
DOI: | 10.1149/2.027309jss |
期刊: | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY |
Volume: | 2 |
Issue: | 9 |
起始頁: | Q187 |
結束頁: | Q191 |
顯示於類別: | 期刊論文 |