完整後設資料紀錄
DC 欄位語言
dc.contributor.authorLi, Chun-Hsingen_US
dc.contributor.authorLiu, Yen-Linen_US
dc.contributor.authorKuo, Chien-Nanen_US
dc.date.accessioned2014-12-08T15:32:53Z-
dc.date.available2014-12-08T15:32:53Z-
dc.date.issued2011-06-01en_US
dc.identifier.issn0018-9480en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TMTT.2011.2130534en_US
dc.identifier.urihttp://hdl.handle.net/11536/22935-
dc.description.abstractIn this study, a low-power and low-voltage 5.5-GHz receiver front-end circuit is designed using a resonator coupling technique. An on-chip transformer combined with the parasitic capacitances from a low-noise amplifier (LNA), a mixer, and the transformer itself comprises two coupled resonators of the resonator coupling network (RCN). The RCN functions as a balun, and couples energy from the LNA to the mixer. Under the critical coupling condition, the RCN gives a maximal current gain at resonance frequencies, equivalent to the same level by an ideal transformer. The analysis shows that the current gain is quite tolerable to the coupling coefficient variation, an advantageous feature for on-chip transformer design. The technique is verified by the receiver front-end in 0.18-mu m CMOS technology. The RCN possess a current gain as high as 12 dB at 5.5 GHz. The measured input return loss, conversion gain, and third-order intermodulation intercept point of the entire circuit are 16 dB, 17.4 dB, and -1.5 dBm, respectively. The noise figure is 7.8 dB at the IF frequency of 1 MHz. The power consumption is only 0.33 mW from a 0.6-V supply. The required local oscillator power is only -9.5 dBm. This receiver front-end successfully demonstrates the resonator coupling technique.en_US
dc.language.isoen_USen_US
dc.subjectBalunen_US
dc.subjectlow-noise amplifier (LNA)en_US
dc.subjectlow poweren_US
dc.subjectlow voltageen_US
dc.subjectmixeren_US
dc.subjectresonator coupling network (RCN)en_US
dc.subjecttransformersen_US
dc.titleA 0.6-V 0.33-mW 5.5-GHz Receiver Front-End Using Resonator Coupling Techniqueen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TMTT.2011.2130534en_US
dc.identifier.journalIEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUESen_US
dc.citation.volume59en_US
dc.citation.issue6en_US
dc.citation.spage1629en_US
dc.citation.epage1638en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000291683100021-
dc.citation.woscount7-
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