標題: | Advantages of Blue LEDs With Graded-Composition AlGaN/GaN Superlattice EBL |
作者: | Lin, Bing-Cheng Chen, Kuo-Ju Han, Hau-Vei Lan, Yu-Pin Chiu, Ching-Hsueh Lin, Chien-Chung Shih, Min-Hsiung Lee, Po-Tsung Kuo, Hao-Chung 光電工程學系 Department of Photonics |
關鍵字: | Light-emitting diodes (LEDs);quantum well (QWs);superlattice (SL) |
公開日期: | 1-十一月-2013 |
摘要: | InGaN/GaN light-emitting diodes (LEDs) with graded-composition AlGaN/GaN superlattice (SL) electron blocking layer (EBL) were designed and grown by metal-organic chemical vapor deposition. The simulation results demonstrated that the LED with a graded-composition AlGaN/GaN SL EBL have superior hole injection efficiency and lower electron leakage over the LED with a conventional AlGaN EBL or normal AlGaN/GaN SL EBL. Therefore, the efficiency droop can be alleviated to be similar to 20% from maximum at an injection current of 15-120 mA, which is smaller than that for conventional AlGaN EBL (30%). The corresponding experimental results also confirm that the use of a graded-composition AlGaN/GaN SL EBL can markedly enhance the light output power by 60%. |
URI: | http://dx.doi.org/10.1109/LPT.2013.2281068 http://hdl.handle.net/11536/22961 |
ISSN: | 1041-1135 |
DOI: | 10.1109/LPT.2013.2281068 |
期刊: | IEEE PHOTONICS TECHNOLOGY LETTERS |
Volume: | 25 |
Issue: | 21 |
起始頁: | 2062 |
結束頁: | 2065 |
顯示於類別: | 期刊論文 |