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dc.contributor.authorWang, Yi-Chihen_US
dc.contributor.authorShieh, Han-Ping D.en_US
dc.date.accessioned2014-12-08T15:33:00Z-
dc.date.available2014-12-08T15:33:00Z-
dc.date.issued2013-10-07en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.4824762en_US
dc.identifier.urihttp://hdl.handle.net/11536/22987-
dc.description.abstractA modified two-step selenization has been demonstrated to overcome inhomogeneous gallium distribution, an issue to lower energy bandgap in the space-charge region as well as cell efficiency. It was found that incorporating selenium into conventional precursors could accelerate the formation of CuInGaSe2 phase in the selenization to accordingly suppress the diffusion effect of gallium. By introducing a pre-heating treatment, this selenization enhanced the bandgap distribution with a back-surface field and an increase of bandgap in the space-charge region, consequently improving open circuit voltage (V-OC) by 25% and cell efficiency by 55%, respectively. (C) 2013 AIP Publishing LLC.en_US
dc.language.isoen_USen_US
dc.titleImprovement of bandgap homogeneity in Cu(In,Ga)Se-2 thin films using a modified two-step selenization processen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.4824762en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume103en_US
dc.citation.issue15en_US
dc.citation.epageen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.department顯示科技研究所zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of Displayen_US
dc.identifier.wosnumberWOS:000325779700077-
dc.citation.woscount4-
Appears in Collections:Articles


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