標題: | Double-graded bandgap in Cu(In,Ga)Se-2 thin film solar cells by low toxicity selenization process |
作者: | Wang, Yi-Chih Shieh, Han-Ping D. 交大名義發表 光電工程學系 顯示科技研究所 National Chiao Tung University Department of Photonics Institute of Display |
公開日期: | 18-八月-2014 |
摘要: | A low-toxic selenization with post gallium diffusion (PGD) treatment has been demonstrated to increase the bandgap in the surface Cu(In,Ga)Se-2 (CIGSe) absorbers and to form double-graded bandgap profiles to improve the cell efficiency. The CIGSe absorber with PGD for 5 min increased open-circuit voltage from 0.49 to 0.66V and efficiency from 9.2% to 13.2%, contributed by the enhancement of carrier recombination in the space-charge region. The reduction in short-circuit current from 30.8 to 29.9 mA/cm(2), attributed to the absorption loss in long-wavelength regions, can be potentially improved by further optimization of the minimum bandgap value in gradient valley. (C) 2014 AIP Publishing LLC. |
URI: | http://dx.doi.org/10.1063/1.4893713 http://hdl.handle.net/11536/25221 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.4893713 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 105 |
Issue: | 7 |
結束頁: | |
顯示於類別: | 期刊論文 |