Improvement of bandgap homogeneity in Cu(In,Ga)Se-2 thin films using a modified two-step selenization process

doi:10.1063/1.4824762

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DC 欄位	值	語言
dc.contributor.author	Wang, Yi-Chih	en_US
dc.contributor.author	Shieh, Han-Ping D.	en_US
dc.date.accessioned	2014-12-08T15:33:00Z	-
dc.date.available	2014-12-08T15:33:00Z	-
dc.date.issued	2013-10-07	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.4824762	en_US
dc.identifier.uri	http://hdl.handle.net/11536/22987	-
dc.description.abstract	A modified two-step selenization has been demonstrated to overcome inhomogeneous gallium distribution, an issue to lower energy bandgap in the space-charge region as well as cell efficiency. It was found that incorporating selenium into conventional precursors could accelerate the formation of CuInGaSe2 phase in the selenization to accordingly suppress the diffusion effect of gallium. By introducing a pre-heating treatment, this selenization enhanced the bandgap distribution with a back-surface field and an increase of bandgap in the space-charge region, consequently improving open circuit voltage (V-OC) by 25% and cell efficiency by 55%, respectively. (C) 2013 AIP Publishing LLC.	en_US
dc.language.iso	en_US	en_US
dc.title	Improvement of bandgap homogeneity in Cu(In,Ga)Se-2 thin films using a modified two-step selenization process	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.4824762	en_US
dc.identifier.journal	APPLIED PHYSICS LETTERS	en_US
dc.citation.volume	103	en_US
dc.citation.issue	15	en_US
dc.citation.epage		en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	顯示科技研究所	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.contributor.department	Institute of Display	en_US
dc.identifier.wosnumber	WOS:000325779700077	-
dc.citation.woscount	4	-
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