INFLUENCE OF THERMODYNAMIC FACTORS ON GROWTH OF ALAS1-XSBX ALLOYS

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	CHEN, WK	en_US
dc.contributor.author	CHIN, MT	en_US
dc.date.accessioned	2014-12-08T15:03:45Z	-
dc.date.available	2014-12-08T15:03:45Z	-
dc.date.issued	1994-10-01	en_US
dc.identifier.issn	0021-4922	en_US
dc.identifier.uri	http://hdl.handle.net/11536/2302	-
dc.description.abstract	Epitaxial layers of AlAs1-xSbx have been prepared by metalorganic vapor phase deposition (MOCVD) in a horizontal, atmospheric-pressure quartz reactor. The influences of the V/III ratio and the input partial pressure of trimethylantimony were systematically studied. The experimental results are in good agreement with the calculated ones, based on thermodynamic considerations, which implies that the growth of AlAsSb in MOCVD is controlled predominantly by thermodynamics.	en_US
dc.language.iso	en_US	en_US
dc.subject	ALASSB	en_US
dc.subject	MOCVD	en_US
dc.subject	THERMODYNAMICS	en_US
dc.title	INFLUENCE OF THERMODYNAMIC FACTORS ON GROWTH OF ALAS1-XSBX ALLOYS	en_US
dc.type	Article	en_US
dc.identifier.journal	JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS	en_US
dc.citation.volume	33	en_US
dc.citation.issue	10A	en_US
dc.citation.spage	L1370	en_US
dc.citation.epage	L1373	en_US
dc.contributor.department	交大名義發表	zh_TW
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	National Chiao Tung University	en_US
dc.contributor.department	Department of Electrophysics	en_US
dc.identifier.wosnumber	WOS:A1994PM48200003	-
dc.citation.woscount	5	-
顯示於類別：	期刊論文