標題: Effects of growth temperature on solid incorporation of AlAs1-xSbx using tertiarybutylarsine as arsenic source precursor
作者: Chen, WK
Ou, JH
Hsu, CH
交大名義發表
電子物理學系
National Chiao Tung University
Department of Electrophysics
關鍵字: MOCVD;AlAsSb;incorporation efficiency
公開日期: 1-Oct-1996
摘要: We have investigated the effects of growth temperature on the solid incorporation of AlAsSb epilayers grown LJ metalorganic vapor-phase epitaxy using TMAl, TBAs and TMSb as source precursors. The solid incorporation of AlAsSb was found to be strongly affected by the pyrolysis reactions and kinetics of the source precursors, in particular, TMAl and TBAs. Our experimental results indicated that the, Al incorporation efficiency increases with the growth temperature and saturates at temperatures above similar to 625 degrees C. On the other hand, the growth behavior of As is anomalous: the As incorporation efficiency increases initially with growth temperature, and decreases monotonously at temperatures above similar to 550 degrees C. The reduced As incorporation efficiency at high temperatures may be closely related to the beta-elimination process of TBAs, and to the formation of adducts in the gas phase.
URI: http://hdl.handle.net/11536/992
ISSN: 0021-4922
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
Volume: 35
Issue: 10A
起始頁: L1234
結束頁: L1237
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