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dc.contributor.authorZhang, Y. J.en_US
dc.contributor.authorLi, Z. Q.en_US
dc.contributor.authorLin, J. J.en_US
dc.date.accessioned2014-12-08T15:33:06Z-
dc.date.available2014-12-08T15:33:06Z-
dc.date.issued2013-08-01en_US
dc.identifier.issn0295-5075en_US
dc.identifier.urihttp://dx.doi.org/10.1209/0295-5075/103/47002en_US
dc.identifier.urihttp://hdl.handle.net/11536/23044-
dc.description.abstractWe have measured the low-field magnetoresistances of a series of Sn-doped indium oxide thick films in the temperature T range of 4-35 K. The electron dephasing rate 1/t. as a function of T for each film was extracted by comparing the magnetoresistance data with the threedimensional weak-localization theoretical predictions. We found that the extracted 1/t. varies linearly with T-3/2. Furthermore, at a given T, 1/t. varies linearly with k(F)(-5/2) F l(-3/2), where kF is the Fermi wave number, and l is the electron elastic mean free path. These features are well explained in terms of the small-energy-transfer electron-electron scattering time in three-dimensional disordered conductors. This electron dephasing mechanism dominates over the electron-phonon scattering process because the carrier concentrations in our films are similar to 3 orders of magnitude lower than those in typical metals, which resulted in a greatly suppressed electron-phonon relaxation rate. Our result is the first quantitative demonstration of this unique three-dimensional electron-electron scattering time in experiments. Copyright (C) EPLA, 2013en_US
dc.language.isoen_USen_US
dc.titleElectron-electron scattering in three-dimensional highly degenerate semiconductorsen_US
dc.typeArticleen_US
dc.identifier.doi10.1209/0295-5075/103/47002en_US
dc.identifier.journalEPLen_US
dc.citation.volume103en_US
dc.citation.issue4en_US
dc.citation.epageen_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000325967900018-
dc.citation.woscount2-
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