標題: Electrical Performances and Structural Designs of Copper Bonding in Wafer-Level Three-Dimensional Integration
作者: Chen, K. N.
Young, A. M.
Lee, S. H.
Lu, J. -Q.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Three-Dimensional Integration;3D IC;Wafer Bonding;Cu Bonding
公開日期: 1-六月-2011
摘要: The integrity of bonded Cu interconnects in wafer-level three-dimensional integration has been investigated as the function of pattern size and density, as well as bonding process parameter. The desired pattern density coupled with the application of bonding process profile we developed gives optimal yield and alignment accuracy, and provides excellent electrical connectivity and contact resistance through the entire wafer. This result is a key milestone in establishing the manufacturability of Cu-based interconnections for 3D integration technology.
URI: http://dx.doi.org/10.1166/jnn.2011.4149
http://hdl.handle.net/11536/23069
ISSN: 1533-4880
DOI: 10.1166/jnn.2011.4149
期刊: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
Volume: 11
Issue: 6
起始頁: 5143
結束頁: 5147
顯示於類別:期刊論文