標題: FABRICATION OF P-CHANNEL POLYCRYSTALLINE SI1-XGEX THIN-FILM TRANSISTORS BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION
作者: LIN, HC
JUNG, TG
LIN, HY
CHANG, CY
CHEN, LP
電控工程研究所
Institute of Electrical and Control Engineering
公開日期: 26-Sep-1994
摘要: In this report, we present a novel approach for fabricating polycrystalline silicon-germanium thin-film transistors at low temperatures (less than or equal to 550 degrees C). A bottom gate configuration is used for this approach, and an i-Si1-xGex/i-Si/p(+)-Si1-yGey multilayer is deposited sequentially on the gate oxide using an ultra-high vacuum chemical vapor deposition technique. The i-Si1-xGex serves as the channel while the i-Si is used as a buffer layer for allowing p(+)-Si1-yGey to be etched selectively on. p-channel thin-film transistors with a held-effect mobility of 13 cm(2)/V s were achieved using this method, which is superior to those grown by low pressure chemical vapor deposition. Our results indicate that the deposition of poly-Si1-xGex/poly-Si multilayer structure would be a promising way for polycrystalline thin-film device applications.
URI: http://dx.doi.org/10.1063/1.112890
http://hdl.handle.net/11536/2311
ISSN: 0003-6951
DOI: 10.1063/1.112890
期刊: APPLIED PHYSICS LETTERS
Volume: 65
Issue: 13
起始頁: 1700
結束頁: 1702
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