完整後設資料紀錄
DC 欄位語言
dc.contributor.authorHuang, Wen-Hengen_US
dc.contributor.authorChung, Ming-Yanen_US
dc.contributor.authorLee, Chi-Shenen_US
dc.date.accessioned2014-12-08T15:33:16Z-
dc.date.available2014-12-08T15:33:16Z-
dc.date.issued2013-07-01en_US
dc.identifier.issn0009-4536en_US
dc.identifier.urihttp://dx.doi.org/10.1002/jccs.201200648en_US
dc.identifier.urihttp://hdl.handle.net/11536/23159-
dc.description.abstractThree new hafnium aluminum antimonides Hf5Al3-xSbx (x = 0.70, 1.44, 2.14) were synthesized from pure elements in an arc-melting reaction; structures were solved from the X-ray diffraction data of single crystals. Al and Sb mixing produced two homogeneity ranges; the Mn5Si3 structural type was homogeneous for 0 x 1.0, and the W5Si3 structure covered the range 2.0 x 2.5. Both structures are condensations of two polyhedrons stacked along the c-axis. Calculations of the electronic structures revealed substantial contributions from Hf-Sb interactions; heteroatomic bonding in Hf-Al and Hf-Sb contacts affected the stabilities of these two phases. Measurements of the resistivity of polycrystalline samples revealed a dependence on temperature, indicating metallic behavior, consistent with the results of our calculations.en_US
dc.language.isoen_USen_US
dc.subjectIntermetallicsen_US
dc.subjectTernary alloy systemsen_US
dc.subjectElectronic structureen_US
dc.titleSyntheses, Crystal Structures, Resistivities and Electronic Structures of Hf5Al3-xSbx (x=0.70, 1.44, 2.14)en_US
dc.typeArticleen_US
dc.identifier.doi10.1002/jccs.201200648en_US
dc.identifier.journalJOURNAL OF THE CHINESE CHEMICAL SOCIETYen_US
dc.citation.volume60en_US
dc.citation.issue7en_US
dc.citation.spage942en_US
dc.citation.epage948en_US
dc.contributor.department應用化學系zh_TW
dc.contributor.departmentDepartment of Applied Chemistryen_US
dc.identifier.wosnumberWOS:000327695600035-
dc.citation.woscount0-
顯示於類別:期刊論文