CATHODOLUMINESCENT CHARACTERISTICS OF ZNGA2O4 PHOSPHOR GROWN BY RADIO-FREQUENCY MAGNETRON SPUTTERING

doi:10.1063/1.358500

Full metadata record

DC Field	Value	Language
dc.contributor.author	HSIEH, IJ	en_US
dc.contributor.author	CHU, KT	en_US
dc.contributor.author	YU, CF	en_US
dc.contributor.author	FENG, MS	en_US
dc.date.accessioned	2014-12-08T15:03:46Z	-
dc.date.available	2014-12-08T15:03:46Z	-
dc.date.issued	1994-09-15	en_US
dc.identifier.issn	0021-8979	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.358500	en_US
dc.identifier.uri	http://hdl.handle.net/11536/2315	-
dc.description.abstract	Low voltage cathodoluminescent characteristics of ZnGa2O4 phosphor grown by rf magnetron sputtering have been investigated from 300 to 700 nm. The effects of substrate heating and annealing treatment on the luminescent characteristics are also studied. A blue cathodoluminescent emission peaked at 470 nm is observed. Better luminescent properties are achieved on the films which have crystal structure with a standard powder x-ray diffraction pattern of ZnGa2O4. The effect of the strength of the ligand field on the resultant energy levels for the ZnGa2O4 phosphor is investigated. Low-voltage phosphor films with excellent cathodoluminescent characteristics have been successfully developed in this research.	en_US
dc.language.iso	en_US	en_US
dc.title	CATHODOLUMINESCENT CHARACTERISTICS OF ZNGA2O4 PHOSPHOR GROWN BY RADIO-FREQUENCY MAGNETRON SPUTTERING	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.358500	en_US
dc.identifier.journal	JOURNAL OF APPLIED PHYSICS	en_US
dc.citation.volume	76	en_US
dc.citation.issue	6	en_US
dc.citation.spage	3735	en_US
dc.citation.epage	3739	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	電控工程研究所	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.contributor.department	Institute of Electrical and Control Engineering	en_US
dc.identifier.wosnumber	WOS:A1994PJ11700075	-
dc.citation.woscount	67	-
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