Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Huang, Yan-Pin | en_US |
dc.contributor.author | Chien, Yu-San | en_US |
dc.contributor.author | Tzeng, Ruoh-Ning | en_US |
dc.contributor.author | Shy, Ming-Shaw | en_US |
dc.contributor.author | Lin, Teu-Hua | en_US |
dc.contributor.author | Chen, Kou-Hua | en_US |
dc.contributor.author | Chiu, Chi-Tsung | en_US |
dc.contributor.author | Chiou, Jin-Chern | en_US |
dc.contributor.author | Chuang, Ching-Te | en_US |
dc.contributor.author | Hwang, Wei | en_US |
dc.contributor.author | Tong, Ho-Ming | en_US |
dc.contributor.author | Chen, Kuan-Neng | en_US |
dc.date.accessioned | 2014-12-08T15:33:26Z | - |
dc.date.available | 2014-12-08T15:33:26Z | - |
dc.date.issued | 2013-12-01 | en_US |
dc.identifier.issn | 0741-3106 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/LED.2013.2285702 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/23230 | - |
dc.description.abstract | A novel CMOS-compatible bond structure using Cu-to-Cu bonding with Ti passivation is demonstrated at low temperature and investigated. With the Ti protection of inner Cu, Cu bonding temperature can be reduced to 180 degrees C. In addition, excellent electrical stability against humidity and temperature cycling is achieved. Diffusion behavior and mechanism of Cu and Ti are also discussed. With excellent bond results and reliability, this bonded scheme has the potential to be applied in 3-D integration. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | 3-D integration | en_US |
dc.subject | Cu bonding | en_US |
dc.subject | Ti passivation | en_US |
dc.title | Novel Cu-to-Cu Bonding With Ti Passivation at 180 degrees C in 3-D Integration | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/LED.2013.2285702 | en_US |
dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
dc.citation.volume | 34 | en_US |
dc.citation.issue | 12 | en_US |
dc.citation.spage | 1551 | en_US |
dc.citation.epage | 1553 | en_US |
dc.contributor.department | 交大名義發表 | zh_TW |
dc.contributor.department | National Chiao Tung University | en_US |
dc.identifier.wosnumber | WOS:000327640400029 | - |
dc.citation.woscount | 0 | - |
Appears in Collections: | Articles |
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