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dc.contributor.authorZhang, Ruien_US
dc.contributor.authorChang, Kuan-Changen_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorTsai, Tsung-Mingen_US
dc.contributor.authorChen, Kai-Huangen_US
dc.contributor.authorLou, Jen-Chungen_US
dc.contributor.authorChen, Jung-Huien_US
dc.contributor.authorYoung, Tai-Faen_US
dc.contributor.authorShih, Chih-Chengen_US
dc.contributor.authorYang, Ya-Liangen_US
dc.contributor.authorPan, Yin-Chihen_US
dc.contributor.authorChu, Tian-Jianen_US
dc.contributor.authorHuang, Syuan-Yongen_US
dc.contributor.authorPan, Chih-Hungen_US
dc.contributor.authorSu, Yu-Tingen_US
dc.contributor.authorSyu, Yong-Enen_US
dc.contributor.authorSze, Simon M.en_US
dc.date.accessioned2014-12-08T15:33:32Z-
dc.date.available2014-12-08T15:33:32Z-
dc.date.issued2013-11-21en_US
dc.identifier.issn1556-276Xen_US
dc.identifier.urihttp://dx.doi.org/10.1186/1556-276X-8-497en_US
dc.identifier.urihttp://hdl.handle.net/11536/23253-
dc.description.abstractIn this letter, a double active layer (Zr:SiO (x) /C:SiO (x) ) resistive switching memory device with outstanding performance is presented. Through current fitting, hopping conduction mechanism is found in both high-resistance state (HRS) and low-resistance state (LRS) of double active layer RRAM devices. By analyzing Raman and FTIR spectra, we observed that graphene oxide exists in C:SiO (x) layer. Compared with single Zr:SiO (x) layer structure, Zr:SiO (x) /C:SiO (x) structure has superior performance, including low operating current, improved uniformity in both set and reset processes, and satisfactory endurance characteristics, all of which are attributed to the double-layer structure and the existence of graphene oxide flakes formed by the sputter process.en_US
dc.language.isoen_USen_US
dc.subjectHigh performanceen_US
dc.subjectGraphene oxideen_US
dc.subjectRRAMen_US
dc.subjectHopping conductionen_US
dc.titleHigh performance of graphene oxide-doped silicon oxide-based resistance random access memoryen_US
dc.typeArticleen_US
dc.identifier.doi10.1186/1556-276X-8-497en_US
dc.identifier.journalNANOSCALE RESEARCH LETTERSen_US
dc.citation.volume8en_US
dc.citation.issueen_US
dc.citation.epageen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000328195100001-
dc.citation.woscount5-
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